PN Junction Diode Multiple Choice Questions Answers; 1. 421. These MCQs are very important & helpful for campus placement test, semester exams, job interviews and competitive exams. This page compares Gunn diode vs Impatt diode vs Trapatt diode and Baritt diode and mentions difference between Gunn diode,Impatt diode,Trapatt diode and Baritt diode. Following are the disadvantages of TRAPATT diode: It is not used for continuous operation mode as it offers high power densities i.e. 443. Half-wave rectifier is a good example of. 433. 450. C) carries more than the rated current. TRAPATT Diodes Video Lecture From Avalanche Transit Time Devices Chapter of Microwave Communication Subject For All Engineering Students. B. 1W Zener Diode Assorted Kit (30 Values x 11pc 3V 3.3V 3.6V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 9.1V 10V 11V 12V 13V 15V 16V 18V 20V 22V 24V … You have to select the right answer to a question. Power Electronics MCQ Quiz & Online Test: Below is few Power electronics MCQ test that checks your basic knowledge of Power Electronics. IMPATT diode basics. How many capacitors are used in a diode-capacitor half- wave voltage doubler? IMPATT Diode Basics 2. TRAPATT DIODE Derived from the Trapped Plasma Avalanche Triggered Transit mode device. 448. TRAPATT Diode. 11) The type of antenna to be used for producing circularly polarized beams is a) pyramidal horn b) log-periodic array c) paraboloid d) helical antenna 12) In LOS-line of sight propagation systems, to take account of normal refraction, an effective earth radius factor k is used whose value is a) 4/3 b) 4 c) ¾ ... Read more Microwave Engineering MCQ Questions Answers Electronics ECE 444. It has the advantage of a greater level of efficiency when compared to an IMPATT microwave diode. 1. 411. The effect obtain when the electric field across a semiconductor is strong enough which causes the free electrons to collide with valence electrons, thereby releasing more electrons and a cumulative multiplication of charge carriers occur. This device is also known as Esaki diode. It is a p-n junction diode characterized by the formation of a trapped space charge plasma within the junction region. Four terminal multi-directional switch. A rectifying metal-semiconductor junction, 412. 417. This is a high-power diode and a very powerful microwave source that is used in high-frequency electronics and microwave devices. Subscribe to our mailing list and get interesting stuff and updates to your email inbox. C. Threshold. a. lower noise. This is also considered as an ac diode. A certain diode has a maximum power dissipation of 500 mW at room temperature and a linear power derating factor of 5.0 mW/°C. MCQ on Rectifiers and Converters. Logic circuitry in which a diode is the logic element and a transistor acts as an inverting amplifier. In a PN junction with no external voltage, the electric field between acceptor and donor ions is called a. What semiconductor diode that have a fine wire (called a cat-whisker) whose point is in permanent contact with the surface of a wafer of semiconductor material such as silicon, germanium or gallium arsenide? What will happen to the magnitude of the load-line slope when the load resistance is decreased? TRAPATT mode can operate at low frequencies since discharge time of plasma can be considerably greater than the nominal transit time of the diode at high field. The impedance presented by a junction operating in its zener breakdown region. 430. We calculate in this paper the output power obtainable, versus frequency, for TRAPATT diodes. B. An improvement of a diode-capacitor half-wave voltage doubler is the full-wave doubler, this circuit uses how many capacitors? Another name of a three-layer diode. Following is the list of practice exam test questions in this brand new series: P In this video, I have explained following topics regarding IMPATT Diode: 1. 445. 440. ... Q135 THE BIGGEST ADVANTAGE OF THE TRAPATT DIODE OVER THE IMPATT DIODE IS IT’S (a)lower noise (b)higher efficiency (c)ability to operate at higher frequency (d)lesser sensitivity to harmonics Multiple Choice Questions and Answers on Semiconductor Diode. What is the drop across the diode when it is connected in series to a resistor of 1.8 kΩ and a supply voltage of 50 V. The supply voltage causes the diode to be reverse-biased. A) the diode conducts poorly. 414. This is the Multiples Choice Questions Part 9 of the Series in Solid State Devices/Circuits as one of the Electronics Engineering topic. The term TRAPATT stands for “trapped plasma avalanche triggered transit mode”. It is an active solid-state device that operates by a reverse bias adequate to cause avalanche breakdown. After this, operation of the Read diode was demonstrated and then in 1966 a PIN diode was also demonstrated to work. 427. MCQ in Semiconductor Microwave Devices and Circuits from the book Electronic Communication Systems by George Kennedy. In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: A planar TRAPATT diode includes a substrate selected from an area of a silicon wafer, a diffused region within the area, a mask of an insulating layer of SiO 2, and a conductive layer of polycrystalline silicon.The silicon wafer includes a doped P region adjacent to the surface thereof and a heavily doped P + region adjacent to the P region. It was first reported by Prager in 1967. Practice more on a regular basis with these NEET Physics objective questions on air pollution and improve your subject knowledge & problem-solving skills along with time management. It has very high noise figure which is about 60 dB. Pinoybix.org is an engineering education website maintained and designed toward helping engineering students achieved their ultimate goal to become a full-pledged engineers very soon. 423. An avalanche diode having a P+NN+ or N+PP+ doping profile and operable in the TRAPATT mode, but wherein the impurity profile of the device is such as to prevent initiation of TRAPATT oscillations by IMPATT oscillations. B) is reverse biased. we respect your privacy and take protecting it seriously, Series of Multiple Choice Questions in Electronics Engineering, Pinoybix Elex is officially on Google Play | First of …, Complete List of Reviewers to Pass Engineering Board Exam, MCQ in Machine Design and Shop Practice Part 8 | …, MCQ in Machine Design and Shop Practice Part 7 | …, MCQ in Refrigeration Engineering Part 8 | ME Board Exam, MCQ in Solid State Devices Part 12 | ECE Board Exam, MCQ in Solid State Devices Part 11 | ECE Board Exam, MCQ in Solid State Devices Part 10 | ECE Board Exam, MCQ in Solid State Devices Part 9 | ECE Board Exam, MCQ in Solid State Devices Part 8 | ECE Board Exam, MCQ in Solid State Devices Part 7 | ECE Board Exam, MCQ in Solid State Devices Part 6 – Answers, MCQ in Solid State Devices Part 6 | ECE Board Exam, MCQ in Solid State Devices Part 5 – Answers, MCQ in Solid State Devices Part 5 | ECE Board Exam, MCQ in Solid State Devices Part 4 – Answers, MCQ in Solid State Devices Part 4 | ECE Board Exam, MCQ in Solid State Devices Part 3 – Answers, MCQ in Solid State Devices Part 3 | ECE Board Exam, MCQ in Solid State Devices Part 2 – Answers, MCQ in Solid State Devices Part 2 | ECE Board Exam, MCQ in Solid State Devices Part 1 – Answers, MCQ in Solid State Devices Part 1 | ECE Board Exam, MCQs in Special Services (Photo Electric, Photo voltaic). A clipper circuit wherein the diode is connected in series with the load. What is the most important specification for semiconductor diode? What is the output voltage across a load resistor if it is paralleled with a forward biased silicon diode? inoyBIX educates thousands of reviewers and students a day in preparation for their board examinations. Diode whose negative resistance depends on a specific form of quantum-mechanical bond structure of the material, 413. Refers to a special type of diode which is capable of both amplification and oscillation. TRAPATT DIODE The TRAPATT (Trapped Plasma Avalanche Triggered Transit) diode is another microwave energy which is used as both amplifier and oscillator. 416. Help me go forward with the same spirit. Also provides professionals with materials for their lectures and practice exams. Choose the letter of the best answer in each questions. A. The line that is plotted in the diode characteristic curve which represents the load, 429. 439. Android Application - https://play.google.com/store/apps/details?id=student.ekeeda.com.ekeeda_studentAccess the Complete Playlist of Microwave Communication:- https://www.youtube.com/playlist?list=PLm_MSClsnwm8-xZSNbH3Am_AAs1QSffdMAccess the Complete Playlist of Chapter Avalanche Transit Time Devices:- https://www.youtube.com/playlist?list=PLL6Ah8JHS-GBEeYeFeDENzPX1Fze1yWe6Subscribe to Ekeeda Channel to Access More Videos :- http://gg.gg/Subscribe-Now#MicrowaveCommunication#EkeedaOnlineLectures #EkeedaVideoLectures #EkeedaVideoTutorialAvalanche Transit Time DevicesAvalanche Transit Time Devices Video LecturesAvalanche Transit Time Devices VideosMicrowave CommunicationMicrowave Communication TutorialMicrowave Communication in LecturesThanks For Watching. It was first reported by Prager in 1967. This test is Rated positive by 85% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. D. Path Gunn vs Impatt vs Trapatt vs Baritt-difference between Gunn diode, Impatt diode, Trapatt diode and Baritt diode types. The TRAPATT diode's diameter ranges from as small as 50 μm for CW operation to 750 μm at lower frequency for highpeak- power devices. 406. ELECTRONICS AND COMMUNICATION ENGINEERING IMPORTANT MCQ-Microwave,EMFT,Communication Part-3. Read diode. Home » Electronics » Questions and Answers ». It operates efficiently below 10 GHz and need greater voltage swing for its operation. 409. 447. ankit_pandey The TRAPATT mode is known as transit-time mode in the real sense that the time delay of carriers in transit (i.e. C) the diode behaves like a zener diode. A device containing more than one diode. 422. 436. How much power the diode can handle if operated at 50°C. PDF | On Apr 8, 2015, Vatsal N Shah published TRAPATT DIODE | Find, read and cite all the research you need on ResearchGate IMPATT Diode. It can be viewed as two zener diodes connected back-to-back in series. 33. A combination of several diodes in a single housing. A silicon diode that exhibits a very high resistance in both directions up to certain voltage, beyond which the unit switches to a low-resistance conducting state. D. all of the above A light emitting diode (LED) is to be used in a circuit with a supply voltage of 5 V. What should be the value of the resistor needed by the LED to operate normally? When the p-n junction of a semiconductor diode is inserted with an intrinsic material, the diode becomes a. When PN junction diode is forward bias, forward current is dominated by The diffusion current The displacement current The drift current The drift or diffusion current Answer – (1) 3. 34. A. P+ region is kept thin and is of 2.5 to 2.7 μm . 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